Performance Analysis of Various Circuit Topologies of DROs Designed at Ku Band Frequencies
Transistor oscillators with high-Q, temperature-stable dielectric resonators as frequency determining elements, are widely used as stable sources for microwave systems. In this work, 14.4 GHz HEMT and FET DROs and 16 GHz HEMT DRO have been designed and implemented and a comparison of their general characteristics has been made. 14.4 GHz FET DRO exhibits the best performance with 6 dBm output power and phase noise -100.7 dBC/Hz at 100 kHz offset.
- Yawar Nadeem, “Performance Analysis of Various Circuit Topologies of DROs Designed at Ku Band Frequencies,” MS Thesis, College of E&ME, NUST, 2006.
Low Phase Noise Oscillator Design
- M. Shahbaz, “Performance Comparison Of g/2 And Ring Resonator Based Oscillators ,” MS Thesis, College of E&ME, NUST, 2013.